Leech Heart (HE) Motor Neuron conductances contributions to NN activity (Lamb & Calabrese 2013)

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Accession:153355
"... To explore the relationship between conductances, and in particular how they influence the activity of motor neurons in the well characterized leech heartbeat system, we developed a new multi-compartmental Hodgkin-Huxley style leech heart motor neuron model. To do so, we evolved a population of model instances, which differed in the density of specific conductances, capable of achieving specific output activity targets given an associated input pattern. ... We found that the strengths of many conductances, including those with differing dynamics, had strong partial correlations and that these relationships appeared to be linked by their influence on heart motor neuron activity. Conductances that had positive correlations opposed one another and had the opposite effects on activity metrics when perturbed whereas conductances that had negative correlations could compensate for one another and had similar effects on activity metrics. "
Reference:
1 . Lamb DG, Calabrese RL (2013) Correlated conductance parameters in leech heart motor neurons contribute to motor pattern formation. PLoS One 8:e79267 [PubMed]
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Model Information (Click on a link to find other models with that property)
Model Type: Realistic Network; Neuron or other electrically excitable cell;
Brain Region(s)/Organism: Leech;
Cell Type(s): Leech heart motor neuron (HE);
Channel(s): I Na,p; I A; I K; I K,leak; I K,Ca; I Sodium; I Calcium; I Na, leak;
Gap Junctions: Gap junctions;
Receptor(s):
Gene(s):
Transmitter(s):
Simulation Environment: GENESIS;
Model Concept(s): Action Potential Initiation; Activity Patterns; Bursting; Temporal Pattern Generation; Detailed Neuronal Models; Parameter sensitivity; Conductance distributions;
Implementer(s): Lamb, Damon [Damon.Lamb at neurology.ufl.edu];
Search NeuronDB for information about:  I Na,p; I A; I K; I K,leak; I K,Ca; I Sodium; I Calcium; I Na, leak;
//genesis

/***********************************************************************
**                                                                    **
**  Compartments.g : compartment definition file, neuron builder kit  **
**                                                                    **
**      By E. De Schutter, Nov 1990                                   **
**      Modified June 1990                                            **
**                                                                    **
**	Modified by D. Beeman for GENESIS 2.0,  April 1995            **
************************************************************************/

/* FUNCTIONS TO MAKE DEFAULT LIBRARY COMPARTMENTS */

// NOTE: Previous (GENESIS 1.*) versions assumed that global variables
// for RM, CN, RA and EREST_ACT had been previously declared and set
// This is no longer necessary

function make_cylind_compartment
        // These default compartment parameters can be overridden by readcell
	float RM = 0.33333      // specific membrane resistance (ohms m^2)
	float CM = 0.01         // specific membrane capacitance (farads/m^2)
	float RA = 0.3          // specific axial resistance (ohms m)
	float EREST_ACT = -0.045// resting membrane potential (volts)
	float	len = 100.0e-6
	float	dia = 2.0e-6
	float PI = 3.14159
	float surface = len * dia * PI

	if (!{exists compartment})
		create	compartment compartment
	end
	setfield compartment \
		Cm		{CM * surface} \		// F
		Ra		{4.0*RA*len / (dia*dia*PI)} \	// ohm
		Em  	{EREST_ACT} \			// V
		Rm		{RM / surface} \ 		// ohm
                dia             {dia} \
		len		{len} \	
		inject		0.0 \
		initVm 		-0.045 //Volts
end

function make_cylind_symcompartment
        // These default compartment parameters can be overridden by readcell
	float RM = 0.33333      // specific membrane resistance (ohms m^2)
	float CM = 0.01         // specific membrane capacitance (farads/m^2)
	float RA = 0.3          // specific axial resistance (ohms m)
	float EREST_ACT = -0.045 // resting membrane potential (volts)
	float	len = 100.0e-6
	float	dia = 2.0e-6
	float PI = 3.14159
	float surface = len * dia * PI

	if (!{exists symcompartment})
		create	symcompartment symcompartment
	end
	setfield symcompartment \
		Cm		{CM * surface} \		// F
		Ra		{4.0*RA*len / (dia*dia*PI)} \	// ohm
		Em  	{EREST_ACT} \			// V
		Rm		{RM / surface} \ 		// ohm
                dia             {dia} \
		len		{len} \	
		inject		0.0  \
		initVm		-0.045 //Volts

end

/******************************************************************************/
/* These functions are included for compatibility with older neurokit
**  versions, one does not need to call them anymore though! */

function make_sphere_compartment
        // These default compartment parameters can be overridden by readcell
	float RM = 0.33333      // specific membrane resistance (ohms m^2)
	float CM = 0.01         // specific membrane capacitance (farads/m^2)
	float RA = 0.3          // specific axial resistance (ohms m)
	float EREST_ACT = -0.045 // resting membrane potential (volts)
	float	dia = 20.0e-6
	float PI = 3.14159
	float surface = dia * dia * PI
	//echo {EREST_ACT}
	if (!{exists compartment_sphere})
		create	compartment compartment_sphere
	end
	setfield compartment_sphere \
		Cm		{CM * surface} \	// F
		Ra		{8.0*RA / (dia*PI)} \	// ohm
		Em  	        {EREST_ACT} \			// V
		Rm		{RM / surface} \ 		// ohm
                dia             {dia} \
		len		0.0 \	
		inject		0.0 \
		initVm		-0.045 //Volts
end

function make_sphere_symcompartment
        // These default compartment parameters can be overridden by readcell
	float RM = 0.33333      // specific membrane resistance (ohms m^2)
	float CM = 0.01         // specific membrane capacitance (farads/m^2)
	float RA = 0.3          // specific axial resistance (ohms m)
	float EREST_ACT = -0.045 // resting membrane potential (volts)
	float	dia = 20.0e-6
	float PI = 3.14159
	float surface = dia * dia * PI
	//echo {EREST_ACT}
	if (!{exists symcompartment_sphere})
		create	symcompartment symcompartment_sphere
	end
	setfield symcompartment_sphere \
		Cm		{CM * surface} \		// F
		Ra		{8.0*RA / (dia*PI)} \	// ohm
		Em  	        {EREST_ACT} \			// V
		Rm		{RM / surface} \ 		// ohm
                dia             {dia} \
		len		0.0   \	
		inject		0.0  \
		initVm		-0.045 //Volts
end