Fronto-parietal visuospatial WM model with HH cells (Edin et al 2007)

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Accession:98017
1) J Cogn Neurosci: 3 structural mechanisms that had been hypothesized to underlie vsWM development during childhood were evaluated by simulating the model and comparing results to fMRI. It was concluded that inter-regional synaptic connection strength cause vsWM development. 2) J Integr Neurosci: Given the importance of fronto-parietal connections, we tested whether connection asymmetry affected resistance to distraction. We drew the conclusion that stronger frontal connections are beneficial. By comparing model results to EEG, we concluded that the brain indeed has stronger frontal-to-parietal connections than vice versa.
Reference:
1 . Edin F, Macoveanu J, Olesen P, Tegnér J, Klingberg T (2007) Stronger synaptic connectivity as a mechanism behind development of working memory-related brain activity during childhood. J Cogn Neurosci 19:750-60 [PubMed]
2 . Edin F, Klingberg T, Stödberg T, Tegnér J (2007) Fronto-parietal connection asymmetry regulates working memory distractibility. J Integr Neurosci 6:567-96 [PubMed]
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Model Information (Click on a link to find other models with that property)
Model Type: Realistic Network;
Brain Region(s)/Organism: Neocortex;
Cell Type(s): Neocortex U1 L2/6 pyramidal intratelencephalic GLU cell; Abstract Wang-Buzsaki neuron;
Channel(s):
Gap Junctions: Gap junctions;
Receptor(s):
Gene(s):
Transmitter(s):
Simulation Environment: NEURON;
Model Concept(s): Working memory; Attractor Neural Network;
Implementer(s):
Search NeuronDB for information about:  Neocortex U1 L2/6 pyramidal intratelencephalic GLU cell;
TITLE INap.mod   interneuron sodium, potassium, and leak channels
 
COMMENT

A persistent voltage dependent Na channel

Author: Fredrik Edin, 2003
Address: freedin@nada.kth.se
y
ENDCOMMENT

UNITS {
        (mA) = (milliamp)
        (mV) = (millivolt)
}

? interface

NEURON {
        SUFFIX INap
        USEION na READ ena WRITE ina
	RANGE gnabar, gna, ena, ina
	GLOBAL htau
}
 
PARAMETER {
        gnabar  = .00015 (mho/cm2)	<0,1e9>
}
 
STATE {
        h
}
 
ASSIGNED {
        v 	(mV)
	celsius (degC)
	gna 	(mho/cm2)
        ina 	(mA/cm2)
        minf
	hinf
	htau 	(ms)
	ena	(mV)
}
 
? currents
BREAKPOINT {
        SOLVE states METHOD cnexp
        gna = gnabar*minf*minf*minf*h
	ina = gna*(v - ena)
}


INITIAL {
	rates(v)
	h = hinf
}

? states
DERIVATIVE states {  
        rates(v)
        h' = (hinf-h)/htau
}
 

LOCAL q10

? rates
PROCEDURE rates(v(mV)) {  :Computes rate and other constants at current v.
                          :Call once from HOC to initialize inf at resting v.
		      
        LOCAL  alpha, beta, sum
        TABLE minf, hinf, htau FROM -100 TO 100 WITH 200

UNITSOFF
        q10 = 3^((celsius - 6.3)/10)

        :"m" sodium activation system
        minf = 1 / ( 1 + exp(-(v+55.7)/7.7) )

        :"h" sodium inactivation system
        alpha = .001 * exp(-(v+85)/30)
        beta =  0.0034 / ( 1 + exp(-(v+17)/10) )
        sum = alpha + beta
	htau = 1/sum
	hinf = alpha/sum
}
 
 
UNITSON