Membrane potential changes in dendritic spines during APs and synaptic input (Palmer & Stuart 2009)

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" ... Finally, we used simulations of our experimental observations in morphologically realistic models to estimate spine neck resistance. These simulations indicated that spine neck resistance ranges up to ~500 M Ohm. Spine neck resistances of this magnitude reduce somatic EPSPs by ~15%, indicating that the spine neck is unlikely to act as a physical device to significantly modify synaptic strength."
1 . Palmer LM, Stuart GJ (2009) Membrane potential changes in dendritic spines during action potentials and synaptic input. J Neurosci 29:6897-903 [PubMed]
Model Information (Click on a link to find other models with that property)
Model Type: Neuron or other electrically excitable cell;
Brain Region(s)/Organism:
Cell Type(s):
Gap Junctions:
Simulation Environment: NEURON;
Model Concept(s): Active Dendrites; Influence of Dendritic Geometry; Synaptic Integration;
Implementer(s): Morse, Tom [Tom.Morse at]; Stuart, Greg J. [greg.stuart at];
// insert_synapses.hoc
// inserts EPSP generating synaptic mechanism into spine
// 1 g_syn mechanism is put in each of three spine heads and also
// another one is placed on dend1[879] for figure 5B

objref syn[4]

forsec "spine_head" {
  syn[spine_cntr]=new syn_g(0.5)
  // gmax value is modifed depending on the figure
  syn[spine_cntr].gmax=500e-6  // or 0, or 0.051

// this dendr. EPSP is only used for Fig 5B
// otherwise gmax set to 0
dend1[879] syn[3] = new syn_g(0.5)
syn[3].onset = 5
syn[3].tau0 = 0.2
syn[3].tau1 = 2
syn[3].gmax = 0.0105  // or 0
syn[3].e = 0

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