Microcircuits of L5 thick tufted pyramidal cells (Hay & Segev 2015)

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Accession:156780
"... We simulated detailed conductance-based models of TTCs (Layer 5 thick tufted pyramidal cells) forming recurrent microcircuits that were interconnected as found experimentally; the network was embedded in a realistic background synaptic activity. ... Our findings indicate that dendritic nonlinearities are pivotal in controlling the gain and the computational functions of TTCs microcircuits, which serve as a dominant output source for the neocortex. "
Reference:
1 . Hay E, Segev I (2015) Dendritic Excitability and Gain Control in Recurrent Cortical Microcircuits. Cereb Cortex 25:3561-71 [PubMed]
Model Information (Click on a link to find other models with that property)
Model Type: Realistic Network; Dendrite;
Brain Region(s)/Organism: Neocortex;
Cell Type(s): Neocortex V1 L6 pyramidal corticothalamic cell;
Channel(s): I Na,p; I Na,t; I L high threshold; I T low threshold; I A; I M; I h; I K,Ca; I A, slow;
Gap Junctions:
Receptor(s): GabaA; AMPA; NMDA; Glutamate;
Gene(s):
Transmitter(s): Gaba; Glutamate;
Simulation Environment: NEURON;
Model Concept(s): Dendritic Action Potentials; Active Dendrites; Detailed Neuronal Models; Laminar Connectivity; Orientation selectivity;
Implementer(s): Hay, Etay [etay.hay at mail.huji.ac.il];
Search NeuronDB for information about:  Neocortex V1 L6 pyramidal corticothalamic cell; GabaA; AMPA; NMDA; Glutamate; I Na,p; I Na,t; I L high threshold; I T low threshold; I A; I M; I h; I K,Ca; I A, slow; Gaba; Glutamate;
/
HaySegev2014
models
readme.txt
Ca_HVA.mod *
Ca_LVAst.mod *
CaDynamics_E2.mod *
epsp.mod *
Ih.mod *
Im.mod *
K_Pst.mod *
K_Tst.mod *
Nap_Et2.mod *
NaTa_t.mod *
NaTs2_t.mod *
ProbAMPANMDA2.mod
ProbUDFsyn2.mod *
SK_E2.mod *
SKv3_1.mod *
cell1.asc *
microcircuit.hoc
                            
:Reference : :		Adams et al. 1982 - M-currents and other potassium currents in bullfrog sympathetic neurones
:Comment: corrected rates using q10 = 2.3, target temperature 34, orginal 21

NEURON	{
	SUFFIX Im
	USEION k READ ek WRITE ik
	RANGE gImbar, gIm, ik
}

UNITS	{
	(S) = (siemens)
	(mV) = (millivolt)
	(mA) = (milliamp)
}

PARAMETER	{
	gImbar = 0.00001 (S/cm2) 
}

ASSIGNED	{
	v	(mV)
	ek	(mV)
	ik	(mA/cm2)
	gIm	(S/cm2)
	mInf
	mTau
	mAlpha
	mBeta
}

STATE	{ 
	m
}

BREAKPOINT	{
	SOLVE states METHOD cnexp
	gIm = gImbar*m
	ik = gIm*(v-ek)
}

DERIVATIVE states	{
	rates()
	m' = (mInf-m)/mTau
}

INITIAL{
	rates()
	m = mInf
}

PROCEDURE rates(){
  LOCAL qt
  qt = 2.3^((34-21)/10)

	UNITSOFF
		mAlpha = 3.3e-3*exp(2.5*0.04*(v - -35))
		mBeta = 3.3e-3*exp(-2.5*0.04*(v - -35))
		mInf = mAlpha/(mAlpha + mBeta)
		mTau = (1/(mAlpha + mBeta))/qt
	UNITSON
}

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