A detailed Purkinje cell model (Masoli et al 2015)

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Accession:229585
The Purkinje cell is one of the most complex type of neuron in the central nervous system and is well known for its massive dendritic tree. The initiation of the action potential was theorized to be due to the high calcium channels presence in the dendritic tree but, in the last years, this idea was revised. In fact, the Axon Initial Segment, the first section of the axon was seen to be critical for the spontaneous generation of action potentials. The model reproduces the behaviours linked to the presence of this fundamental sections and the interplay with the other parts of the neuron.
Reference:
1 . Masoli S, Solinas S, D'Angelo E (2015) Action potential processing in a detailed Purkinje cell model reveals a critical role for axonal compartmentalization. Front Cell Neurosci 9:47 [PubMed]
Model Information (Click on a link to find other models with that property)
Model Type: Neuron or other electrically excitable cell; Axon;
Brain Region(s)/Organism: Cerebellum;
Cell Type(s): Cerebellum Purkinje GABA cell;
Channel(s): I Sodium; I Calcium; I Na,t; I K;
Gap Junctions:
Receptor(s):
Gene(s): Cav2.1 CACNA1A; Cav3.1 CACNA1G; Cav3.2 CACNA1H; Cav3.3 CACNA1I; Nav1.6 SCN8A; Kv1.1 KCNA1; Kv1.5 KCNA5; Kv3.3 KCNC3; Kv3.4 KCNC4; Kv4.3 KCND3; KCa1.1 KCNMA1; KCa2.2 KCNN2; KCa3.1 KCNN4; Kir2.1 KCNJ2; HCN1;
Transmitter(s):
Simulation Environment: NEURON; Python;
Model Concept(s): Bursting; Detailed Neuronal Models; Action Potentials; Action Potential Initiation; Axonal Action Potentials;
Implementer(s): Masoli, Stefano [stefano.masoli at unipv.it]; Solinas, Sergio [solinas at unipv.it];
Search NeuronDB for information about:  Cerebellum Purkinje GABA cell; I Na,t; I K; I Sodium; I Calcium;
TITLE I-h HCN1 channel from Kamilla Angelo, Michael London,Soren R. Christensen, and Michael Hausser 2007 J. of Neurosci.
COMMENT

We call it HCN1 as PC express only HCN1 Santoro et al. 2000
:aggiunta di correzione per Q10 by ERICA GRANDI

ENDCOMMENT

NEURON {
	SUFFIX HCN1
	USEION h READ eh WRITE ih VALENCE 1 
	RANGE gbar, hinf,tauh,ratetau,ih
	RANGE hinf,tauh,eh
}

UNITS {
	(mA) = (milliamp)
	(mV) = (millivolt)
}


CONSTANT {
	q10=3
}

PARAMETER {
    v 		(mV)
    : eh  =-34.4	(mV)        
    gbar=.0001 	(mho/cm2)
    ratetau = 1 (ms)
    rec_temp = 23 (deg) : we set it here at room temperature as in Angelo et al. they forogot tp mention the recording temperature
    ljp = 9.3 (mV) : liquid_junction_potential
    v_inf_half_noljp = -90.3 (mV)
    v_inf_k = 9.67 (mV)
    v_tau_const = 0.0018 (1)
    v_tau_half1_noljp = -68 (mV)
    v_tau_half2_noljp = -68 (mV)
    v_tau_k1 = -22 (mv)
    v_tau_k2 = 7.14 (mv)
 }

STATE {
    h
}

ASSIGNED {
    eh (mV)
    ih (mA/cm2)
    hinf      
    tauh
    celsius (deg)
    v_inf_half (mV)
    v_tau_half1 (mV)
    v_tau_half2 (mV)
    qt
}

INITIAL {

    : ADD Q10 correction!!!!! FATTO!!!
    qt = q10^((celsius-37 (degC))/10 (degC))
    v_inf_half = (v_inf_half_noljp - ljp)
    v_tau_half1 = (v_tau_half1_noljp - ljp)
    v_tau_half2 = (v_tau_half2_noljp - ljp)
    
    rate(v)
    h=hinf
}

BREAKPOINT {
    SOLVE states METHOD cnexp
    ih = h*gbar*(v-eh)
}

DERIVATIVE states {  
    rate(v)
    h' =  (hinf - h)/tauh
}

PROCEDURE rate(v (mV)) {
    : hinf=1/( 1+exp((90+v)/9.67) )
    : tauh=ratetau*1/(0.0018*( exp((v+68)/-22) + exp((v+68)/7.14) ))
    hinf = 1 / (1+exp( (v-v_inf_half) / v_inf_k) )
    tauh = (ratetau / (v_tau_const * ( exp( (v-v_tau_half1) / v_tau_k1) + exp( (v-v_tau_half2) / v_tau_k2) )))/qt
}

















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