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A Model of Multiple Spike Initiation Zones in the Leech C-interneuron (Crisp 2009)

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Accession:116575
The leech C-interneuron and its electrical synapse with the S-interneuron exhibit unusual properties: an asymmetric delay when impulses travel from one soma to the other, and graded C-interneuron impulse amplitudes under elevated divalent cation concentrations. These properties have been simulated using a SNNAP model in which the C-interneuron has multiple, independent spike initiation zones associated with individual electrical junctions with the C-interneuron.
Reference:
1 . Crisp KM (2009) Multiple spike initiation zones in a neuron implicated in learning in the leech: a computational model. Invert Neurosci 9:1-10 [PubMed]
Model Information (Click on a link to find other models with that property)
Model Type: Neuron or other electrically excitable cell;
Brain Region(s)/Organism:
Cell Type(s): Leech C interneuron;
Channel(s): I Na,p; I K; I K,leak; I K,Ca; I Sodium; I Calcium;
Gap Junctions: Gap junctions;
Receptor(s):
Gene(s):
Transmitter(s): Glutamate;
Simulation Environment: SNNAP;
Model Concept(s): Action Potential Initiation; Action Potentials;
Implementer(s): Crisp, Kevin [crisp at stolaf.edu];
Search NeuronDB for information about:  I Na,p; I K; I K,leak; I K,Ca; I Sodium; I Calcium; Glutamate;
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Crisp2009
readme.html
1.8mM_ADP.vdg *
1.8mM_Ca.vdg *
1.8mM_divalents.sm *
1.8mM_Na.vdg *
25mM_ADP.vdg
25mM_Ca.vdg
25mM_divalents.sm
25mM_Na.vdg
ADP.m *
ADP.vdg *
alpha.fAt
AxonalRes.es
C.neu
C1234.neu
C1a.neu
C1a_leak.R *
C1a_leak.vdg
C1b_leak.R *
C1b_leak.vdg
C1c_leak.R *
C1c_leak.vdg
C1d.neu
C1d_leak.R *
C1d_leak.vdg
C2a.neu
C3a.neu
C4a.neu
C4a_leak.R *
C4a_leak.vdg
C4b.neu
C4b_leak.R *
C4b_leak.vdg
C4c.neu
C4c_leak.R *
C4c_leak.vdg
C4d.neu
C4d_leak.R *
C4d_leak.vdg
Ca.fBR *
Ca.ion *
Ca.ion.tmp *
Ca.m *
Ca.vdg *
CCellModel.ntw
divalents.fBR
divalents.sm *
divalents.tr
divalentsCa.fBR
fAHP.m *
fAHP.vdg *
Figure2.smu
Figure2.smu.exec
Figure2.smu.hmn
Figure2.smu.ing
Figure2.smu.out.head
glutamate.cs
Kdr.m *
Kdr.vdg *
leak.R *
leak.vdg
leak_pas.vdg *
leakC1a.R *
mAHP.A *
mAHP.vdg *
Na.h *
Na.m *
Na.vdg *
netwf
netwfile
new.R
new.r.tmp
new2.R
new2.R.tmp
ousgrf.def *
pleak.vdg *
R.neu
r.r
R1.neu
S.neu
S_ExcitableNeurite_1.8mM.neu
S123.neu
Sabcd.neu
SC.es
screenshot.jpg
simufiles.usd
SNNAP_CCell.bas
Stim_S_Rec_C.ous
Stim_S_Rec_C.ous.mnu
Stim_S_Rec_C.trt
Stim_S_Stim_C.ous
Stim_S_Stim_C.ous.mnu
Stim_S_Stim_C.trt
vbas31w.sll
vgui31w.sll
voflr31w.sll
                            
		>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>
		>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>
		>>    modules name: vdg		>>
		>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>
		>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>

		>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>
Ivd:		> 	Current due to a voltage-dependent conductance	>
		>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>

>------------------------------->--------------------------------------->
>				>		p			>
>	1			>	G= g x A x B 		(1)	>
>	model.A		>A<	>					>
>	model.B		>B<	>					>
>	0 		>g<	>					>
>	1 		>P<	>	Ivd = G x (V -E)		>
>	0 		>E<	>					>
>				>					>
>------------------------------->--------------------------------------->
				>		p			>
	2			>	Ivd= g x m x h 		(2)	>
	Na.m		>m<	>					>
	Na.h		>h<	>					>
	350.0		>120 g<	>					>
	4.0		>3 P<	>	Ivd = G x (V -E)		>
	44.2		>55 E<	>					>
				>					>
>------------------------------->--------------------------------------->
>				>		p			>
>	3			>	G= g x A		(3)	>
>	model.A		>A<	>					>
>	0.00 		>g<	>					>
>	1 		>P<	>	Ivd = G x (V -E)		>
>	0 		>E<	>					>
>				>					>
>------------------------------->--------------------------------------->
>				>		p			>
>	4			>	Ivd= g x m 		(4)	>
>	model.m		>m<	>					>
>	0.00 		>g<	>					>
>	1 		>P<	>	Ivd = G x (V -E)		>
>	0 		>E<	>					>
>				>					>
>------------------------------->--------------------------------------->
>				>					>
>	5			>	Ivd = G x (V -E)	(5)	>
>	0.002 		>g<	>					>
>	0 		>E<	>					>
>				>					>
>------------------------------->--------------------------------------->

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