//Created by Paulo Aguiar [pauloaguiar@fc.up.pt] // IMPORTANT NOTE: // The iKCa current is not necessary but provide an idea on how activity control can be achieved. // The early, but truncated increase in the evoked APs results from the interaction between NK1R and iKCa // Remove the iKCa, but renormalize the inputs, if you want a slow and monotonic increase in the evoked APs // CREATE INTERNEURON begintemplate Interneuron public soma, dendrite, hillock, axon create soma, dendrite, hillock, axon proc init() { create soma soma { nseg = 3 L = 20.0 diam = 20.0 //HH channels: iNat and iK insert HH2 { gnabar_HH2 = 0.08 gkbar_HH2 = 0.02 vtraub_HH2 = -55.0 } //intracellular Ca dynamics insert CaIntraCellDyn { depth_CaIntraCellDyn = 0.1 cai_tau_CaIntraCellDyn = 1.0 cai_inf_CaIntraCellDyn = 50.0e-6 } //potassium current dependent on intracellular calcium concentration insert iKCa { gbar_iKCa = 0.002 //0.002 } ek = -70.0 Ra = 150.0 insert pas g_pas = 4.2e-5 e_pas = -65.0 } create dendrite dendrite { nseg = 5 L = 500.0 diam = 4.0 //intracellular Ca dynamics insert CaIntraCellDyn { depth_CaIntraCellDyn = 0.1 cai_tau_CaIntraCellDyn = 2.0 cai_inf_CaIntraCellDyn = 50.0e-6 } //potassium current dependent on intracellular calcium concentration insert iKCa { gbar_iKCa = 0.002 //0.002 } ek = -70.0 Ra = 150.0 insert pas g_pas = 4.2e-5 e_pas = -65.0 } create hillock hillock { nseg = 3 L = 3.0 diam(0:1) = 2.0:1.0 //HH channels: iNa,t and iK insert HH2 { gnabar_HH2 = 0.1 gkbar_HH2 = 0.04 vtraub_HH2 = -55.0 } Ra = 150.0 insert pas g_pas = 4.2e-5 e_pas = -65.0 } create axon axon { nseg = 5 L = 1000.0 diam = 1.0 //HH channels: iNa,t and iK insert HH2 { gnabar_HH2 = 0.1 gkbar_HH2 = 0.04 //0.06 vtraub_HH2 = -55 } Ra = 150.0 insert pas g_pas = 4.2e-5 e_pas = -65.0 } //CONNECTIONS soma connect hillock(0),1 hillock connect axon(0),1 soma connect dendrite(0),0 } endtemplate Interneuron //************************************************************************************ //UNITS //Category Variable Units //Time t [ms] //Voltage v [mV] //Current i [mA/cm2] (distributed) [nA] (point process) //Concentration ko, ki, etc. [mM] //Specific capacitance cm [uf/cm2] //Length diam, L [um] //Conductance g [S/cm2] (distributed) [uS] (point process) //Cytoplasmic resistivity Ra [ohm cm] //Resistance Ri [10E6 ohm]