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1. Model information:
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This is the readme for the model associated with the
paper:
Neumaier F, Apldogan S, Hescheler J and
Schneider T (2020) Zn2+-induced changes in Cav2.3 channel
function: An electrophysiological and modeling study. J. Gen. Physiol. (https://doi.org/10.1085/jgp.202012585)
Model information:
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The state diagram for
the Cav2.3 channel model in the absence of trace metal ions, which
was developed based on channel structure, previous modeling studies and the
ability to fit the data, is shown below (see also Fig. 15 in the accompanying
paper). Horizontal transitions are voltage-dependent and correspond to movement
of the four non-identical voltage-sensors and pore opening or closing
respectively. Activation of two voltage-sensors (1 and 2) is obligatory for
channel opening, giving rise to a total of 4 open states. Vertical transitions
are voltage-independent and correspond to entry into and return from fast and
slow inactivated states. The rates for voltage-dependent transitions were
expressed in terms of the transition-state theory, and the parameters optimized
by fitting the model to macroscopic currents recorded with various
electrophysiological protocols (see below). The effects of Zn2+ were
implemented by assuming that Zn2+ binding to a first site (KZn=0.003 mM) leads to
electrostatic modification and mechanical slowing of one of the voltage-sensors
while Zn2+-binding to a second, intra-pore site (KZn=0.1
mM) blocks the channel and modifies the opening and
closing transitions (for details see the accompanying paper).
Experimental and
modeling conditions:
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As a basis for model
development, whole-cell patch-clamp recordings were performed in HEK-293 cells
stably transfected with human Cav2.3+β3 channel
subunits. All recordings were performed at room temperature and with
near-physiological extracellular solutions that contained 4 mM
free Ca2+ for ionic currents or 4 mM free
Mg2+ and 0.1 mM free La3+ for
gating currents. The complete data set used for fitting included gating
currents recorded at 15 different test potentials, long (400 ms) and short (25 ms) IV-currents
recorded at 10 and 15 different test potentials respectively, IIV-currents
recorded at 13 different test potentials and PPI-currents recorded at 14
different test potentials (for details on the voltage protocols see the
accompanying paper and the simulations below). Parameter optimization and
simulations were performed with an in silico one-compartmental model of a HEK293 cell with
diameter and length 21.851 �m, which corresponds to a sphere with a surface
area of 1500 �m2. Default temperature, specific membrane capacitance
and cytoplasmic resistivity were 22�C, 1 �F/cm2 and 60 Ω*cm
respectively. �
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2. Files:
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The following files are required to run one of the
simulations:
'Cav23.mod', which contains the Markov-type kinetic
model of Cav2.3 channels
'vclamp_pl.mod', which contains a voltage clamp model
with five levels that has been adopted from a previous model by Balbi et al. (Accession: 230137)
'IV static.hoc', 'IV dynamic.hoc', 'IVlong static.hoc', 'IVlong dynamic.hoc', 'IIV.hoc' or 'PPI.hoc', which contain the code for the different
simulations described in section 4
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3. Compiling the mechanism (.mod) files and starting a
simulation:
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Under linux:
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Compile the mod files using the command 'nrnivmodl'.
Use one of the following commands to start the
simulations:
nrngui IV static.hoc
nrngui IV dynamic.hoc
nrngui IVlong static.hoc
nrngui IVlong dynamic.hoc
nrngui IIV.hoc
nrngui PPI.hoc
Under Windows:
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Run 'mknrndll' to compile
the mod files.
Double click on one of the hoc files to start the
simulations.
Under MAC OS X:
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Drag the model folder onto the mknrndll
icon to compile the mod files.
Drag one of the hoc files onto the nrngui
icon to start the simulations.
More information on running NEURON models can be found
at
https://senselab.med.yale.edu/ModelDB/NEURON_DwnldGuide.htm
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4. Simulation control:
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When one of the hoc files is started, several panels
for simulation control will appear. The Clamp Control panel (middle)
contains the start button for running simulations and several clamp parameters,
which can be changed by the user to modify the default voltage protocol. The CaR Control panel (bottom) provides control
over the number of channels per cm2, the single channel permeability
and the free Zn2+ concentration (in mM).
The simulation speed can be adjusted by reducing or increasing the value of dt in the Run Control panel
(top).
IV static.hoc:
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With the default clamp parameters, a click on the
start button generates a family of current traces (bottom window) evoked with
the same voltage protocol (top window) as that used in Fig. 15C, 16A and 17A
(left panel) of the paper.
IV dynamic.hoc:
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With the default clamp parameters, a click on the
start button runs a dynamic simulation with the same voltage protocol as above
but a clamping increment of 1 mV and plots the peak current-voltage
relationship.
IVlong static.hoc:
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With the default clamp parameters, a click on the start
button generates a family of current traces (bottom window) evoked with the
same voltage protocol (top window) as that used in Fig. 15F and 17A (right
panel) of the paper.
IVlong dynamic.hoc:
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With the default clamp parameters, a click on the
start button runs a dynamic simulation with the same voltage protocol as above
but a clamping increment of 1 mV and plots the peak current-voltage
relationship.
IIV.hoc:
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With the default clamp parameters, a click on the
start button generates a family of current traces (bottom window) evoked with
the same voltage protocol (top window) as that used in Fig. 15D, 16C and 17B of
the paper.
PPI.hoc:
--------
With the default clamp parameters, a click on the
start button generates a family of current traces (bottom window) evoked with
the same voltage protocol (top window) as that used in Fig. 15E and 16B of the
paper and plots the normalized pre-pulse inactivation relationship. The
simulation speed can be increased by deselecting the Display Button at the
bottom of the Clamp Control panel, which switches off display of the current
traces during the simulation.